Opportunity: COMSOL Modeling and Parameter Calibration of Diamond-Based Transistors

Project Overview
This project introduces an undergraduate student to computational semiconductor physics through the modeling and empirical validation of diamond-based transistors. Diamond is a leading wide-bandgap material for next-generation power electronics due to its superior thermal conductivity, high breakdown electric field, and high carrier mobility. Working in COMSOL Multiphysics, the student will bridge theoretical device physics with practical, data-driven simulation methods.

Research Plan
The student will begin by onboarding with the COMSOL Semiconductor Module, constructing and simulating a standard silicon baseline transistor to master mesh generation, boundary conditions, and current-voltage (IV) characteristics.

Building on this foundation, the student will modify the device geometry to match target diamond transistor dimensions and transition material properties from silicon to diamond. Once the diamond model converges and operates without numerical errors, the student will calibrate critical material parameters—such as carrier mobilities and contact resistances—against measured experimental data.

Deliverables & Skills Gained
By summer’s end, the student will deliver a fully calibrated, predictive simulation model and present their findings. The student will gain hands-on expertise in COMSOL Simulation, advanced semiconductor materials, and experimental data integration.